ZXMN6A11DN8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

5.7nC @ 10V

Width :

4mm

Rise Time :

3.5ns

Rds On (Max) @ Id, Vgs :

120m Ω @ 2.5A, 10V

Qualification Status :

Not Qualified

Power Dissipation :

1.25W

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 40V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.14Ohm

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Power - Max :

1.8W

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

RoHS Status :

RoHS Compliant

Pin Count :

8

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

2.5A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Turn On Delay Time :

1.95 ns

Drain to Source Breakdown Voltage :

60V

Max Power Dissipation :

1.25W

FET Feature :

Logic Level Gate

Voltage - Rated DC :

60V

Gate to Source Voltage (Vgs) :

20V

Current Rating :

2.7A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2002

Height :

1.5mm

Fall Time (Typ) :

3.5 ns

Turn-Off Delay Time :

8.2 ns

Terminal Finish :

MATTE TIN

Number of Pins :

8

Lead Free :

Lead Free

Number of Elements :

2

Number of Terminations :

8

Weight :

73.992255mg

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Length :

5mm

Number of Channels :

2