ZXMN6A09DN8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current Rating :

4.4A

Terminal Finish :

MATTE TIN

Power Dissipation :

1.25W

Drain Current-Max (Abs) (ID) :

3.9A

Continuous Drain Current (ID) :

4.3A

Number of Pins :

8

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

3V @ 250µA

Mounting Type :

Surface Mount

Turn On Delay Time :

4.9 ns

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Breakdown Voltage :

60V

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

60V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

2

Max Power Dissipation :

1.25W

Operating Mode :

ENHANCEMENT MODE

Weight :

73.992255mg

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

40m Ω @ 8.2A, 10V

ECCN Code :

EAR99

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Rise Time :

5ns

Pin Count :

8

Drain-source On Resistance-Max :

0.045Ohm

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

24.2nC @ 5V

Fall Time (Typ) :

5 ns

RoHS Status :

RoHS Compliant

Number of Channels :

2

Input Capacitance (Ciss) (Max) @ Vds :

1407pF @ 40V

Turn-Off Delay Time :

25.3 ns

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Terminal Form :

Gull wing