ZXMN3G32DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power - Max :

1.8W

Number of Channels :

2

Weight :

73.992255mg

Element Configuration :

Dual

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

2

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

17 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

472pF @ 15V

Power Dissipation :

2.1W

Published :

2008

Radiation Hardening :

No

Mounting Type :

Surface Mount

Pbfree Code :

yes

Nominal Vgs :

3 V

Fall Time (Typ) :

9.7 ns

Height :

1.5mm

Width :

4mm

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

3V

Continuous Drain Current (ID) :

7.1A

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Dual)

Terminal Form :

Gull wing

Max Power Dissipation :

2.1W

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

5.5A

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 10V

Rise Time :

3.1ns

Turn-Off Delay Time :

14 ns

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Feature :

Logic Level Gate

Length :

5mm

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

28m Ω @ 6A, 10V

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

2.5 ns

Pin Count :

8

Resistance :

45mOhm

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Dual Supply Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

5.5A

Termination :

SMD/SMT