ZXMN3A06DN8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2002

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

21.6 ns

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

4.9A

Width :

4mm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1.25W

Qualification Status :

Not Qualified

Height :

1.5mm

FET Type :

2 N-Channel (Dual)

Length :

5mm

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Power - Max :

1.8W

Voltage - Rated DC :

30V

Weight :

73.992255mg

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

3 ns

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Number of Channels :

2

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Fall Time (Typ) :

6.4 ns

Input Capacitance (Ciss) (Max) @ Vds :

796pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.25W

Number of Pins :

8

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

35m Ω @ 9A, 10V

FET Feature :

Logic Level Gate

Pin Count :

8

Rise Time :

6.4ns

Drain to Source Breakdown Voltage :

30V

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

17.5nC @ 10V

Terminal Form :

Gull wing

Number of Terminations :

8

Terminal Finish :

MATTE TIN

Current Rating :

4.8A

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.035Ohm

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)