ZXMN2A04DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Resistance :

25mOhm

Mount :

Surface Mount

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Height :

1.5mm

Turn-Off Delay Time :

50.5 ns

Mounting Type :

Surface Mount

Number of Channels :

2

Drain to Source Breakdown Voltage :

20V

Drain Current-Max (Abs) (ID) :

5.9A

Input Capacitance (Ciss) (Max) @ Vds :

1880pF @ 10V

Width :

4mm

JESD-609 Code :

e3

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Published :

2012

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

2 N-Channel (Dual)

Voltage - Rated DC :

20V

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

22.1nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

30.6 ns

Vgs(th) (Max) @ Id :

700mV @ 250μA (Min)

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

2.1W

Current - Continuous Drain (Id) @ 25°C :

5.9A

Additional Feature :

LOW THRESHOLD

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Power Dissipation :

2.1W

Gate to Source Voltage (Vgs) :

12V

Radiation Hardening :

No

Power - Max :

1.8W

Rise Time :

14.8ns

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Continuous Drain Current (ID) :

7.7A

Length :

5mm

Factory Lead Time :

17 Weeks

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

25m Ω @ 5.9A, 4.5V

Transistor Application :

SWITCHING

Weight :

73.992255mg

Current Rating :

6A

Turn On Delay Time :

7.9 ns

REACH SVHC :

No SVHC

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40