VT6Z2T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Elements :

2

Collector Emitter Saturation Voltage :

-150mV

Published :

2015

Terminal Finish :

TIN COPPER

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Transistor Type :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Number of Pins :

6

Polarity :

NPN, PNP

Operating Temperature :

150°C TJ

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

50V

Max Collector Current :

100mA

Emitter Base Voltage (VEBO) :

5V

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA ICBO

Gain Bandwidth Product :

300MHz

Radiation Hardening :

No

Mount :

Surface Mount

JESD-609 Code :

e2

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Package / Case :

6-SMD

Collector Emitter Breakdown Voltage :

50V

Number of Terminations :

6

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Power - Max :

150mW

Packaging :

Tape and Reel (TR)

Transition Frequency :

350MHz

Max Power Dissipation :

150mW

Pin Count :

6

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

10

Collector Base Voltage (VCBO) :

50V

Factory Lead Time :

13 Weeks

Terminal Form :

Flat

Frequency - Transition :

350MHz