VMM650-01F

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

100V

Drain to Source Resistance :

2.2 MΩ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

--

Rds On Max :

2.2 MΩ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

680A

Mounting Type :

Chassis Mount

Mount :

Chassis Mount, Screw

Power - Max :

--

Vgs(th) (Max) @ Id :

4V @ 30mA

Supplier Device Package :

Y3-Li

Case Connection :

Isolated

Package Shape :

RECTANGULAR

ECCN Code :

EAR99

Operating Temperature :

-40°C~150°C TJ

Manufacturer :

IXYS Corporation

Package / Case :

Y3-Li

Series :

HiPerFET™

Base Product Number :

VMM650

Drain Current-Max (Abs) (ID) :

680 A

Number of Terminals :

9

Transistor Element Material :

SILICON

RoHS :

Compliant

Published :

2004

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Transistor Application :

SWITCHING

Package :

Bulk

Min Operating Temperature :

-40 °C

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.0018Ohm

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

9

Number of Elements :

2

Fall Time (Typ) :

250 ns

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

1440nC @ 10V

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PUFM-X9

Max Operating Temperature :

150 °C

Drain to Source Breakdown Voltage :

100V

Continuous Drain Current (ID) :

680A

Packaging :

Bulk

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 500A, 10V

Polarity/Channel Type :

N-Channel

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN THERMISTOR

Terminal Position :

UPPER

Product Status :

Active

Terminal Form :

UNSPECIFIED

Base Part Number :

VMM

DS Breakdown Voltage-Min :

100 V

Turn-Off Delay Time :

400 ns

Rise Time :

250ns

FET Type :

2 N-Channel (Dual)