US6J2TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

12V

Power Dissipation :

1W

Current Rating :

-1A

Continuous Drain Current (ID) :

1A

Resistance :

390mOhm

Base Part Number :

*J2

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Number of Elements :

2

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

Max Power Dissipation :

1W

Turn-Off Delay Time :

25 ns

Terminal Finish :

TIN COPPER

Rds On (Max) @ Id, Vgs :

390m Ω @ 1A, 4.5V

Operating Temperature :

150°C TJ

Voltage - Rated DC :

-20V

Transistor Application :

SWITCHING

Rise Time :

8ns

Packaging :

Tape and Reel (TR)

Factory Lead Time :

10 Weeks

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

JESD-609 Code :

e2

Number of Pins :

6

Drain to Source Breakdown Voltage :

-20V

Turn On Delay Time :

9 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

10 ns

Package / Case :

6-SMD, Flat Leads

Vgs(th) (Max) @ Id :

2V @ 1mA

Element Configuration :

Dual

Pin Count :

6

Lead Free :

Lead Free

Published :

2004

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 10V

Time@Peak Reflow Temperature-Max (s) :

10

FET Type :

2 P-Channel (Dual)

Drain Current-Max (Abs) (ID) :

1A