UPA2450BTL-E1-A
- Mfr.Part #
- UPA2450BTL-E1-A
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- 6-VFDFN Exposed Pad
- Datasheet
- Download
- Description
- SMALL SIGNAL N-CHANNEL MOSFET
- Stock
- 23,353
- In Stock :
- 23,353
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- N-Channel
- Continuous Drain Current (ID) :
- 8.6 A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Channel Type :
- Dual N
- Series :
- -
- Power - Max :
- 700mW
- Brand Name :
- Renesas
- Subcategory :
- FET General Purpose Power
- FET Type :
- 2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs :
- 17.5mOhm @ 4A, 4.5V
- Package :
- Bulk
- Power Dissipation-Max (Abs) :
- 2.5 W
- Pin Count :
- 6
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 4V
- Product Status :
- Obsolete
- Power Dissipation :
- 2.5 W
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 1.5V @ 1mA
- Manufacturer :
- Renesas Electronics Corporation
- FET Feature :
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C :
- 8.6A
- Drain to Source Breakdown Voltage :
- 20 V
- Package / Case :
- 6-VFDFN Exposed Pad
- Surface Mount :
- yes
- Drain Current-Max (Abs) (ID) :
- 8.6 A
- Drain to Source Voltage (Vdss) :
- 20 V
- Drain to Source Resistance :
- 12.5 mΩ
- Number of Pins :
- 6
- Gate to Source Voltage (Vgs) :
- 12 V
- Reach Compliance Code :
- Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 520pF @ 10V
- Factory Lead Time :
- 1 Week
- RoHS :
- Compliant
- Supplier Device Package :
- 6-HWSON
- Datasheets
- UPA2450BTL-E1-A

2 N-Channel (Dual) 17.5mOhm @ 4A, 4.5V 520pF @ 10V 8nC @ 4V 20 V 6-VFDFN Exposed Pad
UPA2450BTL-E1-A Overview
A device's maximal input capacitance is 520pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 8.6 A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20 V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 8.6 A, which is the maximum continuous current the device can conduct.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 12.5 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12 V volts.This transistor requires a 20 V drain to source voltage (Vdss).
UPA2450BTL-E1-A Features
a continuous drain current (ID) of 8.6 A
a drain-to-source breakdown voltage of 20 V voltage
single MOSFETs transistor is 12.5 mΩ
a 20 V drain to source voltage (Vdss)
UPA2450BTL-E1-A Applications
There are a lot of Renesas
UPA2450BTL-E1-A applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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