UPA2450BTL-E1-A
- Mfr.Part #
- UPA2450BTL-E1-A
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- 6-VFDFN Exposed Pad
- Datasheet
- Download
- Description
- SMALL SIGNAL N-CHANNEL MOSFET
- Stock
- 23,353
- In Stock :
- 23,353
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Continuous Drain Current (ID) :
- 8.6 A
- Number of Pins :
- 6
- FET Type :
- 2 N-Channel (Dual)
- Factory Lead Time :
- 1 Week
- Pin Count :
- 6
- Drain to Source Voltage (Vdss) :
- 20 V
- FET Feature :
- Logic Level Gate
- Polarity/Channel Type :
- N-Channel
- Series :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 520pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 4V
- Drain to Source Resistance :
- 12.5 mΩ
- Brand Name :
- Renesas
- Surface Mount :
- yes
- Rds On (Max) @ Id, Vgs :
- 17.5mOhm @ 4A, 4.5V
- RoHS :
- Compliant
- Manufacturer :
- Renesas Electronics Corporation
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max (Abs) :
- 2.5 W
- Package / Case :
- 6-VFDFN Exposed Pad
- Product Status :
- Obsolete
- Current - Continuous Drain (Id) @ 25°C :
- 8.6A
- Channel Type :
- Dual N
- Subcategory :
- FET General Purpose Power
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 20 V
- Power Dissipation :
- 2.5 W
- Package :
- Bulk
- Power - Max :
- 700mW
- Supplier Device Package :
- 6-HWSON
- Vgs(th) (Max) @ Id :
- 1.5V @ 1mA
- Gate to Source Voltage (Vgs) :
- 12 V
- Drain Current-Max (Abs) (ID) :
- 8.6 A
- Reach Compliance Code :
- Compliant
- Pbfree Code :
- yes
- Datasheets
- UPA2450BTL-E1-A

2 N-Channel (Dual) 17.5mOhm @ 4A, 4.5V 520pF @ 10V 8nC @ 4V 20 V 6-VFDFN Exposed Pad
UPA2450BTL-E1-A Overview
A device's maximal input capacitance is 520pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 8.6 A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20 V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 8.6 A, which is the maximum continuous current the device can conduct.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 12.5 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12 V volts.This transistor requires a 20 V drain to source voltage (Vdss).
UPA2450BTL-E1-A Features
a continuous drain current (ID) of 8.6 A
a drain-to-source breakdown voltage of 20 V voltage
single MOSFETs transistor is 12.5 mΩ
a 20 V drain to source voltage (Vdss)
UPA2450BTL-E1-A Applications
There are a lot of Renesas
UPA2450BTL-E1-A applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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