UMZ2NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Length :

2mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Operating Temperature :

150°C TJ

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

VCEsat-Max :

0.4 V

Packaging :

Tape and Reel (TR)

Width :

1.25mm

Polarity :

NPN, PNP

JESD-609 Code :

e2

Time@Peak Reflow Temperature-Max (s) :

10

Mounting Type :

Surface Mount

Element Configuration :

Dual

Max Power Dissipation :

150mW

Published :

2004

Mount :

Surface Mount

Transistor Type :

NPN, PNP

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

60V

Transition Frequency :

180MHz

Gain Bandwidth Product :

180MHz

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Package / Case :

6-TSSOP, SC-88, SOT-363

Frequency - Transition :

180MHz 140MHz

Emitter Base Voltage (VEBO) :

7V

Height :

700μm

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Max Collector Current :

150mA

ECCN Code :

EAR99

Continuous Collector Current :

150mA

Max Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

100nA ICBO

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

hFE Min :

120

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

50V

HTS Code :

8541.21.00.75

Current Rating :

150mA

Max Frequency :

100MHz

Pbfree Code :

yes

Transistor Application :

SWITCHING

Pin Count :

6

Terminal Finish :

TIN COPPER

Base Part Number :

*MZ2

Terminal Form :

Gull wing

Number of Terminations :

6