UMY1NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

Width :

1.25mm

Transistor Element Material :

SILICON

Continuous Collector Current :

150mA

Operating Temperature :

150°C TJ

Number of Terminations :

5

Pin Count :

5

Emitter Base Voltage (VEBO) :

7V

VCEsat-Max :

0.4 V

REACH SVHC :

No SVHC

Height :

900μm

Base Part Number :

*MY1

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

13 Weeks

Terminal Form :

Gull wing

Frequency - Transition :

180MHz 140MHz

Package / Case :

5-TSSOP, SC-70-5, SOT-353

Collector Emitter Voltage (VCEO) :

50V

Max Frequency :

100MHz

Mount :

Surface Mount

Length :

2mm

hFE Min :

120

Max Collector Current :

150mA

Max Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Transition Frequency :

180MHz

Max Power Dissipation :

150mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

150mA

Number of Elements :

2

Element Configuration :

Dual

Collector Base Voltage (VCBO) :

60V

Collector Emitter Breakdown Voltage :

50V

Polarity :

NPN, PNP

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Number of Pins :

5

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

JESD-609 Code :

e2

Terminal Finish :

Tin/Copper (Sn/Cu)

Published :

2004

Transistor Application :

AMPLIFIER

Power Dissipation :

150mW

Peak Reflow Temperature (Cel) :

260

Transistor Type :

NPN, PNP (Emitter Coupled)

Time@Peak Reflow Temperature-Max (s) :

10

Lead Free :

Lead Free

Gain Bandwidth Product :

180MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

400mV