UMG1NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Factory Lead Time :

13 Weeks

Frequency - Transition :

250MHz

Pbfree Code :

yes

Length :

2.1mm

JESD-609 Code :

e2

Terminal Form :

Gull wing

Number of Terminations :

5

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Radiation Hardening :

No

Package / Case :

5-TSSOP, SC-70-5, SOT-353

VCEsat-Max :

0.3 V

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 5V

Collector Emitter Voltage (VCEO) :

300mV

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

10

Emitter Base Voltage (VEBO) :

5V

Pin Count :

5

Terminal Finish :

TIN COPPER

Max Breakdown Voltage :

50V

Voltage - Rated DC :

50V

Number of Elements :

2

Current Rating :

30mA

Width :

1.35mm

Max Operating Temperature :

150°C

Resistor - Emitter Base (R2) :

22k Ω

Base Part Number :

*MG1

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

100mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

Number of Pins :

5

Resistor - Base (R1) :

22k Ω

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Mount :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Height :

900μm

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Max Power Dissipation :

300mW

Min Operating Temperature :

-55°C

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Breakdown Voltage :

50V

Polarity :

NPN

hFE Min :

56

RoHS Status :

ROHS3 Compliant

Published :

2011