UMB9NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Base (R1) :

10k Ω

Pbfree Code :

yes

Min Operating Temperature :

-55°C

Continuous Collector Current :

-70mA

Base Part Number :

MB9

Lead Free :

Lead Free

Power Dissipation :

150mW

Number of Elements :

2

Operating Supply Voltage :

50V

Mount :

Surface Mount

Voltage - Rated DC :

-50V

Max Collector Current :

100mA

JESD-609 Code :

e2

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Current - Collector Cutoff (Max) :

500nA

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

150mW

Number of Pins :

6

Transistor Application :

SWITCHING

VCEsat-Max :

0.3 V

Number of Terminations :

6

Resistor - Emitter Base (R2) :

47k Ω

Frequency - Transition :

250MHz

Current Rating :

-70mA

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Finish :

Tin/Copper (Sn/Cu)

Element Configuration :

Dual

Max Breakdown Voltage :

50V

Package / Case :

6-TSSOP, SC-88, SOT-363

Terminal Form :

Gull wing

Polarity :

PNP

Pin Count :

6

ECCN Code :

EAR99

HTS Code :

8541.21.00.75

Transistor Type :

2 PNP - Pre-Biased (Dual)

Published :

2004

Collector Emitter Voltage (VCEO) :

300mV

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

hFE Min :

68

Transition Frequency :

250MHz

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Max Output Current :

100mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7