TSM9933DCS RLG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

60m Ω @ 4.7A, 4.5V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G8

Vgs(th) (Max) @ Id :

1.4V @ 250μA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

4.7A Tc

Power - Max :

2W

Transistor Element Material :

SILICON

Number of Elements :

2

Published :

2015

DS Breakdown Voltage-Min :

20V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 4.5V

Pulsed Drain Current-Max (IDM) :

20A

Drain to Source Voltage (Vdss) :

20V

Surface Mount :

yes

Number of Terminations :

8

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

4.7A

Factory Lead Time :

28 Weeks

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Feature :

Standard

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 10V

FET Type :

2 P-Channel (Dual)

Drain-source On Resistance-Max :

0.06Ohm

Packaging :

Digi-Reel®