TPH1R306PL,L1Q
- Mfr.Part #
- TPH1R306PL,L1Q
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 100A 8SOP
- Stock
- 269,708
- In Stock :
- 269,708
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 1.34m Ω @ 50A, 10V
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- Non-RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Power Dissipation-Max :
- 960mW Ta 170W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 91nC @ 10V
- Series :
- U-MOSIX-H
- Drain to Source Voltage (Vdss) :
- 60V
- Operating Temperature :
- 175°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 8100pF @ 30V
- Package / Case :
- 8-PowerVDFN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Datasheets
- TPH1R306PL,L1Q

N-Channel Tape & Reel (TR) 1.34m Ω @ 50A, 10V ±20V 8100pF @ 30V 91nC @ 10V 60V 8-PowerVDFN
TPH1R306PL,L1Q Description
The TPH1R306PL, L1Q is a Silicon N-channel MOSFET.
TPH1R306PL,L1Q Features
-
High-speed switching
-
Small gate charge: QSW = 22 NC (Typ.)
-
Small output charge: Qoss = 77.5 NC (Typ.)
-
Low drain-source on-resistance: RDS(ON) = 1.0 m Ω (Typ.) (VGS = 10 V)
-
Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
-
Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1.0 mA)
TPH1R306PL,L1Q Applications
-
High-Efficiency DC-DC Converters
-
Switching Voltage Regulators
-
Motor Drivers
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