TPH11006NL,LQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

17A

Mounting Type :

Surface Mount

Terminal Position :

Dual

Weight :

850.995985mg

Number of Terminations :

5

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

RoHS Status :

RoHS Compliant

Operating Temperature :

150°C TJ

Turn On Delay Time :

11 ns

Number of Channels :

1

Avalanche Energy Rating (Eas) :

33 mJ

Drain Current-Max (Abs) (ID) :

40A

Series :

U-MOSVIII-H

JESD-30 Code :

S-PDSO-F5

Power Dissipation-Max :

1.6W Ta 34W Tc

DS Breakdown Voltage-Min :

60V

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

60V

Mount :

Surface Mount

Rise Time :

4ns

Vgs(th) (Max) @ Id :

2.5V @ 200μA

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

27 ns

Rds On (Max) @ Id, Vgs :

11.4m Ω @ 8.5A, 10V

Package / Case :

8-PowerVDFN

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Fall Time (Typ) :

7.1 ns

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Terminal Form :

Flat

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Published :

2014

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1