TPH1110ENH,L1Q
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- Mfr.Part #
- TPH1110ENH,L1Q
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 7.2A 8SOP
- Stock
- 32,592
- In Stock ：
- 32,592
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 4.5 ns
- Power Dissipation-Max :
- 1.6W Ta 42W Tc
- Rds On (Max) @ Id, Vgs :
- 114m Ω @ 3.6A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- 150°C TJ
- Package / Case :
- 8-PowerVDFN
- RoHS Status :
- RoHS Compliant
- Vgs (Max) :
- ±20V
- Published :
- 2014
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 7.2A
- Turn On Delay Time :
- 14 ns
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 7.2A Ta
- Turn-Off Delay Time :
- 19 ns
- FET Type :
- N-Channel
- Series :
- U-MOSVIII-H
- Gate Charge (Qg) (Max) @ Vgs :
- 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 600pF @ 100V
- Number of Channels :
- 1
- Number of Pins :
- 8
- Rise Time :
- 5.2ns
- Mounting Type :
- Surface Mount
- Weight :
- 850.995985mg
- Drain to Source Breakdown Voltage :
- 200V
- Factory Lead Time :
- 18 Weeks
- Packaging :
- Cut Tape (CT)
- Vgs(th) (Max) @ Id :
- 4V @ 200μA
- Datasheets
- TPH1110ENH,L1Q
N-Channel Cut Tape (CT) 114m Ω @ 3.6A, 10V ±20V 600pF @ 100V 7nC @ 10V 8-PowerVDFN
TPH1110ENH,L1Q Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 600pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 7.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 19 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
TPH1110ENH,L1Q Features
a continuous drain current (ID) of 7.2A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 19 ns
TPH1110ENH,L1Q Applications
There are a lot of Toshiba Semiconductor and Storage
TPH1110ENH,L1Q applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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