TPH12008NH,L1Q
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- Mfr.Part #
- TPH12008NH,L1Q
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 24A 8SOP
- Stock
- 1,132
- In Stock ：
- 1,132
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 80V
- Reach Compliance Code :
- Unknown
- Number of Pins :
- 8
- FET Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 44A
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Packaging :
- Cut Tape (CT)
- Continuous Drain Current (ID) :
- 24A
- Vgs(th) (Max) @ Id :
- 4V @ 300μA
- Power Dissipation :
- 48W
- Series :
- U-MOSVIII-H
- Mounting Type :
- Surface Mount
- Rise Time :
- 5ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900pF @ 40V
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Factory Lead Time :
- 18 Weeks
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 7.4 ns
- Power Dissipation-Max :
- 1.6W Ta 48W Tc
- Rds On (Max) @ Id, Vgs :
- 12.3m Ω @ 12A, 10V
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- 150°C TJ
- Package / Case :
- 8-PowerVDFN
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2014
- Turn-Off Delay Time :
- 24 ns
- Datasheets
- TPH12008NH,L1Q
N-Channel Cut Tape (CT) 12.3m Ω @ 12A, 10V ±20V 1900pF @ 40V 22nC @ 10V 8-PowerVDFN
TPH12008NH,L1Q Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1900pF @ 40V.This device conducts a continuous drain current (ID) of 24A, which is the maximum continuous current transistor can conduct.Using VGS=80V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 80V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 44A.When the device is turned off, a turn-off delay time of 24 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
TPH12008NH,L1Q Features
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 24 ns
TPH12008NH,L1Q Applications
There are a lot of Toshiba Semiconductor and Storage
TPH12008NH,L1Q applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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