TC7920K6-G
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- Mfr.Part #
- TC7920K6-G
- Manufacturer
- Microchip Technology
- Package / Case
- 12-VFDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET 2N/2P-CH 200V 12VDFN
- Stock
- 1,418
- In Stock ：
- 1,418
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Minimum Operating Temperature :
- - 55 C
- Series :
- -
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Channels :
- 4 Channel
- Qualification Status :
- Not Qualified
- Power - Max :
- -
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Current - Continuous Drain (Id) @ 25°C :
- -
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Input Capacitance (Ciss) (Max) @ Vds :
- 52pF @ 25V
- Fall Time (Typ) :
- 15 ns
- Turn On Delay Time :
- 10 ns
- Factory Lead Time :
- 14 Weeks
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Package :
- Tape and Reel (TR)
- Supplier Device Package :
- 12-DFN (4x4)
- DS Breakdown Voltage-Min :
- 200V
- Product :
- MOSFET Small Signal
- Mounting Style :
- SMD/SMT
- Channel Mode :
- Enhancement
- Subcategory :
- MOSFETs
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 20 ns
- Drain-source On Resistance-Max :
- 7Ohm
- Package / Case :
- 12-VFDFN Exposed Pad
- Configuration :
- SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
- Terminal Form :
- NO LEAD
- Published :
- 2004
- Mount :
- Surface Mount
- Product Status :
- Active
- Number of Pins :
- 12
- Operating Mode :
- ENHANCEMENT MODE
- Channel Type :
- Dual N/P
- Contact Plating :
- Tin
- Rds On (Max) @ Id, Vgs :
- 10 Ω @ 1A, 10V
- FET Type :
- 2 N and 2 P-Channel
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Number of Terminations :
- 12
- Product Category :
- MOSFET
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Base Product Number :
- TC7920
- Lead Free :
- Lead Free
- RoHS :
- Details
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- ROHS3 Compliant
- FET Feature :
- Standard
- Drain to Source Voltage (Vdss) :
- 200V
- Transistor Polarity :
- N-Channel, P-Channel
- Brand :
- Microchip Technology
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- 2 N-Channel, 2 P-Channel
- Number of Elements :
- 4
- JESD-609 Code :
- e4
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Product Type :
- MOSFET
- Manufacturer :
- Microchip
- Technology :
- Si
- Transistor Element Material :
- SILICON
- Rise Time :
- 15ns
- Maximum Operating Temperature :
- + 150 C
- Datasheets
- TC7920K6-G
TC7920K6-G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microchip Technology stock available at
TC7920K6-G Description
The TC7920 consists of two pairs of high-voltage, low-threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package. All MOSFETs have integrated the output drain high-voltage diodes, gate-to-source resistors, and gate-to-source Zener diode clamps which are desired for high-voltage pulser applications. The complimentary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pairs utilize an advanced vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown.
TC7920K6-G Features
• High-Voltage Vertical DMOS Technology
• Integrated Drain Output High-Voltage Diodes
• Integrated Gate-to-Source Resistor
• Integrated Gate-to-Source Zener Diode
• Low Threshold, Low On-Resistance
• Low Input and Output Capacitance
• Fast Switching Speeds
• Electrically Isolated N-channel and P-channel
MOSFET Pairs
TC7920K6-G Applications
• High-Voltage Pulsers
• Amplifiers
• Buffers
• Piezoelectric Transducer Drivers
• General Purpose Line Drivers
• Logic-Level Interfaces
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