STY139N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

2400 mJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

520A

Height :

24.6mm

Resistance :

17mOhm

Number of Terminations :

3

Drain to Source Breakdown Voltage :

650V

Fall Time (Typ) :

37 ns

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Rds On (Max) @ Id, Vgs :

17m Ω @ 65A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Rise Time :

56ns

Max Junction Temperature (Tj) :

150°C

JESD-30 Code :

R-PSIP-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

25V

Number of Pins :

247

Series :

MDmesh™ V

Continuous Drain Current (ID) :

130A

Turn On Delay Time :

295 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Package / Case :

TO-247-3

Power Dissipation :

625W

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

363nC @ 10V

Packaging :

Tube

Operating Temperature :

150°C TJ

Vgs (Max) :

±25V

Base Part Number :

STY139

Turn-Off Delay Time :

295 ns

Contact Plating :

Tin

Lead Free :

Lead Free

Radiation Hardening :

No

ECCN Code :

EAR99

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Width :

5.3mm

Input Capacitance (Ciss) (Max) @ Vds :

15600pF @ 100V

Power Dissipation-Max :

625W Tc

Number of Channels :

1

Length :

15.9mm

Mounting Type :

Through Hole