STY130NF20D

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Base Part Number :

STY130

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

800 mJ

Pulsed Drain Current-Max (IDM) :

520A

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Mount :

Through Hole

Pin Count :

3

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSIP-T3

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

250 ns

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Turn On Delay Time :

232 ns

Series :

STripFET™ II

Drain to Source Breakdown Voltage :

200V

Package / Case :

TO-247-3

Power Dissipation :

450W

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

11100pF @ 25V

JESD-609 Code :

e3

Number of Pins :

247

Rds On (Max) @ Id, Vgs :

12m Ω @ 65A, 10V

Resistance :

12mOhm

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

283 ns

Power Dissipation-Max :

450W Tc

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

338nC @ 10V

Continuous Drain Current (ID) :

130A

Rise Time :

218ns