STY105NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Mounting Type :

Through Hole

Fall Time (Typ) :

70 ns

Continuous Drain Current (ID) :

110A

Number of Pins :

247

Drain to Source Voltage (Vdss) :

500V

Gate to Source Voltage (Vgs) :

25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Mount :

Through Hole

Factory Lead Time :

12 Weeks

Packaging :

Tube

Turn-Off Delay Time :

353 ns

Turn On Delay Time :

47 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

625W Tc

Resistance :

22mOhm

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Package / Case :

TO-247-3

Input Capacitance (Ciss) (Max) @ Vds :

9600pF @ 100V

Drain to Source Breakdown Voltage :

600V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Series :

MDmesh™ II

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

88ns

Gate Charge (Qg) (Max) @ Vgs :

326nC @ 10V

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

22m Ω @ 52A, 10V

Vgs (Max) :

±25V

Base Part Number :

STY105

Power Dissipation :

625W