STY100NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

625W Tc

Turn On Delay Time :

45 ns

Input Capacitance (Ciss) (Max) @ Vds :

9600pF @ 50V

Power Dissipation :

625W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

29m Ω @ 49A, 10V

Length :

15.9mm

ECCN Code :

EAR99

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

98A Tc

Series :

MDmesh™ II

Fall Time (Typ) :

81 ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Drain to Source Breakdown Voltage :

600V

Gate to Source Voltage (Vgs) :

25V

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

Number of Elements :

1

Width :

5.3mm

Package / Case :

TO-247-3

FET Type :

N-Channel

Mounting Type :

Through Hole

Number of Pins :

247

Height :

20.3mm

Base Part Number :

STY100

Continuous Drain Current (ID) :

98A

Mount :

Through Hole

Turn-Off Delay Time :

372 ns

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Rise Time :

52ns

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single