STS2DNF30L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn On Delay Time :

19 ns

Lifecycle Status :

NRND (Last Updated: 7 months ago)

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.15Ohm

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Radiation Hardening :

No

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Rds On (Max) @ Id, Vgs :

110m Ω @ 1A, 10V

Operating Temperature :

-55°C~150°C TJ

Current Rating :

3A

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

3A

Continuous Drain Current (ID) :

3A

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

2W

Threshold Voltage :

1.7V

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

2W

Base Part Number :

STS2D

Weight :

4.535924g

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Turn-Off Delay Time :

12 ns

FET Feature :

Logic Level Gate

Pin Count :

8

Height :

6.35mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

18V

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 10V

Length :

50.8mm

Number of Elements :

2

JESD-609 Code :

e4

Series :

STripFET™

Fall Time (Typ) :

8 ns

Time@Peak Reflow Temperature-Max (s) :

30

Voltage - Rated DC :

30V

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual)

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

9A

Input Capacitance (Ciss) (Max) @ Vds :

121pF @ 25V

Mount :

Surface Mount

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Terminations :

8

Width :

6.35mm

Peak Reflow Temperature (Cel) :

260

Rise Time :

20ns