STS2DNF30L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

12 ns

Gate to Source Voltage (Vgs) :

18V

Width :

6.35mm

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Rise Time :

20ns

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Base Part Number :

STS2D

ECCN Code :

EAR99

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

110m Ω @ 1A, 10V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e4

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain to Source Breakdown Voltage :

30V

Lifecycle Status :

NRND (Last Updated: 7 months ago)

Length :

50.8mm

FET Feature :

Logic Level Gate

Series :

STripFET™

Fall Time (Typ) :

8 ns

Number of Elements :

2

Transistor Element Material :

SILICON

Current Rating :

3A

Drain-source On Resistance-Max :

0.15Ohm

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

121pF @ 25V

Continuous Drain Current (ID) :

3A

Height :

6.35mm

Mount :

Surface Mount

Threshold Voltage :

1.7V

FET Type :

2 N-Channel (Dual)

Turn On Delay Time :

19 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

30V

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

9A

Pin Count :

8

Number of Pins :

8

Drain Current-Max (Abs) (ID) :

3A

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Max Power Dissipation :

2W

Terminal Form :

Gull wing

Power Dissipation :

2W

Operating Temperature :

-55°C~150°C TJ

Weight :

4.535924g

Transistor Application :

SWITCHING