STS15N4LLF3
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- Mfr.Part #
- STS15N4LLF3
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 15A 8SO
- Stock
- 63,473
- In Stock ：
- 63,473
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Pin Count :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 4.5V
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Rise Time :
- 25ns
- FET Type :
- N-Channel
- Vgs (Max) :
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2530pF @ 25V
- Turn-Off Delay Time :
- 62 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Threshold Voltage :
- 1V
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 16V
- Resistance :
- 5mOhm
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 7.5A
- Drain to Source Breakdown Voltage :
- 40V
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- JESD-609 Code :
- e4
- Power Dissipation :
- 2.7W
- Number of Pins :
- 8
- REACH SVHC :
- No SVHC
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Peak Reflow Temperature (Cel) :
- 260
- Fall Time (Typ) :
- 9 ns
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Terminal Finish :
- NICKEL PALLADIUM GOLD
- Number of Terminations :
- 8
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Series :
- STripFET™
- Base Part Number :
- STS15
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Lead Free :
- Lead Free
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 7.5A, 10V
- Power Dissipation-Max :
- 2.7W Tc
- Pulsed Drain Current-Max (IDM) :
- 60A
- Number of Elements :
- 1
- Datasheets
- STS15N4LLF3
N-Channel Tape & Reel (TR) 5m Ω @ 7.5A, 10V ±16V 2530pF @ 25V 28nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
STS15N4LLF3 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2530pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 7.5A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.It is [62 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 60A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
STS15N4LLF3 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 7.5A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 60A.
a threshold voltage of 1V
STS15N4LLF3 Applications
There are a lot of STMicroelectronics
STS15N4LLF3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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