STS13N3LLH5
- Mfr.Part #
- STS13N3LLH5
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 13A 8SO
- Stock
- 43,541
- In Stock :
- 43,541
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 22.7 ns
- Power Dissipation :
- 2.7W
- Base Part Number :
- STS13
- Number of Elements :
- 1
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Input Capacitance (Ciss) (Max) @ Vds :
- 1500pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 9.3 ns
- Pulsed Drain Current-Max (IDM) :
- 52A
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Drain to Source Breakdown Voltage :
- 30V
- Number of Terminations :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 22V
- Series :
- STripFET™ V
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 4.5V
- Transistor Application :
- SWITCHING
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ) :
- 4.5 ns
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Number of Pins :
- 8
- Pin Count :
- 8
- Rds On (Max) @ Id, Vgs :
- 6.6m Ω @ 6.5A, 10V
- Rise Time :
- 14.5ns
- Packaging :
- Cut Tape (CT)
- Vgs (Max) :
- +22V, -20V
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 13A
- Power Dissipation-Max :
- 2.7W Tc
- Resistance :
- 6.6mOhm
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Datasheets
- STS13N3LLH5

N-Channel Cut Tape (CT) 6.6m Ω @ 6.5A, 10V +22V, -20V 1500pF @ 25V 12nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
STS13N3LLH5 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 22.7 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 52A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 22VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
STS13N3LLH5 Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 22.7 ns
based on its rated peak drain current 52A.
STS13N3LLH5 Applications
There are a lot of STMicroelectronics
STS13N3LLH5 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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