STP5NB60

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

5A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

100W Tc

Avalanche Energy Rating (Eas) :

300 mJ

Reach Compliance Code :

not_compliant

Number of Terminations :

3

Pin Count :

3

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Drain to Source Breakdown Voltage :

600V

JESD-30 Code :

R-PSFM-T3

Power Dissipation :

100W

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±30V

Rise Time :

10ns

Mounting Type :

Through Hole

Current Rating :

5A

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

20A

Voltage - Rated DC :

600V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-220-3

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

884pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Fall Time (Typ) :

7 ns

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

2Ohm

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

2 Ω @ 2.5A, 10V

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Matte Tin (Sn)

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

5V @ 250μA

Series :

PowerMESH™

Mount :

Through Hole

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Continuous Drain Current (ID) :

5A