STP55NF06FP
- Mfr.Part #
- STP55NF06FP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 50A TO220FP
- Stock
- 11,900
- In Stock :
- 11,900
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Packaging :
- Tube
- Fall Time (Typ) :
- 15 ns
- Length :
- 10.4mm
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- Isolated
- Drain to Source Breakdown Voltage :
- 60V
- Number of Terminations :
- 3
- Base Part Number :
- STP55N
- Threshold Voltage :
- 3V
- JEDEC-95 Code :
- TO-220AB
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Series :
- STripFET™ II
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 27.5A, 10V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~175°C TJ
- Width :
- 4.6mm
- Power Dissipation-Max :
- 30W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Nominal Vgs :
- 3 V
- Resistance :
- 18mOhm
- Factory Lead Time :
- 12 Weeks
- Turn-Off Delay Time :
- 36 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 60V
- Rise Time :
- 50ns
- Package / Case :
- TO-220-3 Full Pack
- Current Rating :
- 50A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 30W
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Dual Supply Voltage :
- 60V
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Turn On Delay Time :
- 20 ns
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 50A
- Height :
- 9.3mm
- Pulsed Drain Current-Max (IDM) :
- 200A
- Datasheets
- STP55NF06FP

N-Channel Tube 18m Ω @ 27.5A, 10V ±20V 1300pF @ 25V 60nC @ 10V TO-220-3 Full Pack
STP55NF06FP Description
STP55NF06FP emerges as a member of N-channel STripFET? II power MOSFETs provided by STMicroelectronics based on its unique STripFET process that is developed to minimize input capacitance and gate charge. The resulting STP55NF06FP can be widely used for applications requiring low gate charge, and it can be as a primary switch in high-efficiency isolated DC/DC converters for telecom and computer applications.
STP55NF06FP Features
-
Low gate charge
-
Low input capacitance
-
Unique STripFET process
-
Exceptional dv/dt capability
-
Available in the TO-220 package
STP55NF06FP Applications
-
Switching applications
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