STP50NE08

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Fall Time (Typ) :

30 ns

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

200A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Power Dissipation-Max :

150W Tc

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

150W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Rated DC :

80V

Rise Time :

95ns

JESD-609 Code :

e3

Lead Free :

Contains Lead

Transistor Application :

SWITCHING

Number of Terminations :

3

Continuous Drain Current (ID) :

50A

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

ECCN Code :

EAR99

Packaging :

Tube

RoHS Status :

Non-RoHS Compliant

Base Part Number :

STP50N

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.024Ohm

Pin Count :

3

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

JESD-30 Code :

R-PSFM-T3

Current Rating :

50A

Terminal Finish :

Tin

Avalanche Energy Rating (Eas) :

300 mJ

Operating Temperature :

175°C TJ

Rds On (Max) @ Id, Vgs :

24m Ω @ 25A, 10V

Drain to Source Breakdown Voltage :

80V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V