STP5N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3.7A Tc

Width :

4.6mm

Packaging :

Tube

Continuous Drain Current (ID) :

3.7A

Number of Channels :

1

Number of Pins :

3

Vgs (Max) :

±25V

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 10V

Avalanche Energy Rating (Eas) :

80 mJ

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Package / Case :

TO-220-3

ECCN Code :

EAR99

Weight :

329.988449mg

Turn On Delay Time :

11.8 ns

Element Configuration :

Single

Height :

15.75mm

Gate to Source Voltage (Vgs) :

25V

FET Type :

N-Channel

Factory Lead Time :

16 Weeks

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

600V

Base Part Number :

STP5N

Mount :

Through Hole

Power Dissipation-Max :

45W Tc

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

165pF @ 100V

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 1.85A, 10V

Series :

MDmesh™ II Plus

Turn-Off Delay Time :

70 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

10.4mm

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V