STP52N25M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

25V

Continuous Drain Current (ID) :

28A

Rds On (Max) @ Id, Vgs :

65m Ω @ 14A, 10V

Avalanche Energy Rating (Eas) :

230 mJ

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Pulsed Drain Current-Max (IDM) :

112A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Rise Time :

18ns

Vgs(th) (Max) @ Id :

5V @ 100µA

JEDEC-95 Code :

TO-220AB

Terminal Position :

Single

Power Dissipation-Max :

110W Tc

Fall Time (Typ) :

64 ns

Vgs (Max) :

±25V

Drain to Source Breakdown Voltage :

250V

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Radiation Hardening :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Mount :

Through Hole

Additional Feature :

ULTRA LOW-ON RESISTANCE

Drain-source On Resistance-Max :

0.065Ohm

Packaging :

Tube

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

JESD-30 Code :

R-PSFM-T3

Base Part Number :

STP52N

Series :

MDmesh™ V

Power Dissipation :

110W

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 50V