STP5NB40
- Mfr.Part #
- STP5NB40
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 4.7A TO220AB
- Stock
- 46,269
- In Stock :
- 46,269
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Lead Free :
- Contains Lead
- Power Dissipation :
- 80W
- Continuous Drain Current (ID) :
- 4.7A
- Drain to Source Breakdown Voltage :
- 400V
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-220-3
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 6 ns
- Rise Time :
- 8ns
- Vgs (Max) :
- ±30V
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 4.7A
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 405pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 1.8 Ω @ 2.3A, 10V
- Pulsed Drain Current-Max (IDM) :
- 19A
- Transistor Element Material :
- SILICON
- Series :
- PowerMESH™
- Voltage - Rated DC :
- 400V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Base Part Number :
- STP5N
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 4.7A Tc
- Pin Count :
- 3
- Power Dissipation-Max :
- 80W Tc
- Datasheets
- STP5NB40

N-Channel Tube 1.8 Ω @ 2.3A, 10V ±30V 405pF @ 25V 20nC @ 10V TO-220-3
STP5NB40 Description
The STW15NB50 PowerMESHTM MOSFET has used the latest high voltage MESH OVERLAY process, SGS-Thomson which has designed an advanced family of power MOSFETs with outstanding performances. The new patent-pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STP5NB40 Features
-
Typical RDS(ON)=1.47 ?
-
Extremely high dv/dt capability
-
Very low intrinsic capacitances
-
100% avalanche tested
-
Gate charge minimized
STP5NB40 Applications
-
High current, high-speed switching
-
Switch-mode power supplies (SMPS)
-
DC-AC converters for welding equipment and uninterruptible
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