STP5NB40

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Mfr.Part #
STP5NB40
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 400V 4.7A TO220AB
Stock
46,269
In Stock :
46,269

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Operating Temperature :
150°C TJ
Transistor Application :
SWITCHING
Packaging :
Tube
Lead Free :
Contains Lead
Power Dissipation :
80W
Continuous Drain Current (ID) :
4.7A
Drain to Source Breakdown Voltage :
400V
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
30V
JESD-30 Code :
R-PSFM-T3
Package / Case :
TO-220-3
Qualification Status :
Not Qualified
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
6 ns
Rise Time :
8ns
Vgs (Max) :
±30V
RoHS Status :
ROHS3 Compliant
Current Rating :
4.7A
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
405pF @ 25V
Rds On (Max) @ Id, Vgs :
1.8 Ω @ 2.3A, 10V
Pulsed Drain Current-Max (IDM) :
19A
Transistor Element Material :
SILICON
Series :
PowerMESH™
Voltage - Rated DC :
400V
Vgs(th) (Max) @ Id :
5V @ 250μA
JEDEC-95 Code :
TO-220AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Avalanche Energy Rating (Eas) :
200 mJ
Base Part Number :
STP5N
Number of Terminations :
3
Mount :
Through Hole
Terminal Finish :
Matte Tin (Sn)
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
4.7A Tc
Pin Count :
3
Power Dissipation-Max :
80W Tc
Datasheets
STP5NB40
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STP5NB40 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, Base Part Number:STP5N, Number of Terminations:3, STP5NB40 pinout, STP5NB40 datasheet PDF, STP5NB40 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STP5NB40 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STP5NB40


N-Channel Tube 1.8 Ω @ 2.3A, 10V ±30V 405pF @ 25V 20nC @ 10V TO-220-3

STP5NB40 Description


The STW15NB50 PowerMESHTM MOSFET has used the latest high voltage MESH OVERLAY process, SGS-Thomson which has designed an advanced family of power MOSFETs with outstanding performances. The new patent-pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 



STP5NB40 Features


  • Typical RDS(ON)=1.47 ?

  • Extremely high dv/dt capability

  • Very low intrinsic capacitances

  • 100% avalanche tested

  • Gate charge minimized



STP5NB40 Applications


  • High current, high-speed switching

  • Switch-mode power supplies (SMPS)

  • DC-AC converters for welding equipment and uninterruptible


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