STP4NB100

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

1kV

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

1000V

Current Rating :

3.8A

Terminal Finish :

Tin (Sn)

Qualification Status :

Not Qualified

Power Dissipation :

125W

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Rds On (Max) @ Id, Vgs :

4.4 Ω @ 2A, 10V

Base Part Number :

STP4N

FET Type :

N-Channel

Lead Free :

Contains Lead

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

Continuous Drain Current (ID) :

3.8A

Element Configuration :

Single

Voltage - Rated DC :

1kV

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±30V

Number of Elements :

1

Pin Count :

3

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

360 mJ

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

125W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

9ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Series :

PowerMESH™

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Reach Compliance Code :

not_compliant

Fall Time (Typ) :

12 ns

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Number of Terminations :

3

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

JEDEC-95 Code :

TO-220AB