STP40NF12
- Mfr.Part #
- STP40NF12
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 120V 40A TO220AB
- Stock
- 15,229
- In Stock :
- 15,229
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation :
- 150W
- Power Dissipation-Max :
- 150W Tc
- Package / Case :
- TO-220-3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Radiation Hardening :
- No
- Current Rating :
- 40A
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 28 ns
- Lifecycle Status :
- NRND (Last Updated: 8 months ago)
- Turn-Off Delay Time :
- 84 ns
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 120V
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1880pF @ 25V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Series :
- STripFET™ II
- Rise Time :
- 63ns
- Continuous Drain Current (ID) :
- 40A
- Rds On (Max) @ Id, Vgs :
- 32m Ω @ 20A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSFM-T3
- Drain to Source Breakdown Voltage :
- 120V
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 28 ns
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- JESD-609 Code :
- e3
- Drain-source On Resistance-Max :
- 0.032Ohm
- Contact Plating :
- Tin
- Base Part Number :
- STP40N
- Datasheets
- STP40NF12

N-Channel Tube 32m Ω @ 20A, 10V ±20V 1880pF @ 25V 80nC @ 10V TO-220-3
This Power MOSFET series is an N-channel 120V - 0.028 - 40A TO-220 Low gate charge MOSFET realized with STripFETTM II Power MOSFET STP40NF12.
STMicroelectronics' STripFET method was created primarily to minimize input capacitance and gate charge. As a result, it can be employed as the primary switch in highly efficient isolated DC-DC converters for telecom and computer applications. It's also appropriate for any application that necessitates a low-gate-charge drive.
STP40NF12 Features
100% avalanche tested
Exceptional dv/dt capability
Application oriented characterization
STP40NF12 Applications
Switching application
UPS and motor control
High-efficiency DC-DC converters
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