STP45N10F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Rise Time :

17ns

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

100V

Power Dissipation-Max :

60W Tc

Packaging :

Tube

Weight :

329.988449mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Continuous Drain Current (ID) :

45A

Rds On (Max) @ Id, Vgs :

18m Ω @ 22.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Element Configuration :

Single

Base Part Number :

STP45N

Fall Time (Typ) :

8 ns

Length :

10.4mm

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Series :

DeepGATE™, STripFET™ VII

Turn-Off Delay Time :

24 ns

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Width :

4.6mm

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1640pF @ 50V

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Number of Elements :

1

Height :

15.75mm

Power Dissipation :

60W

FET Type :

N-Channel

Lead Free :

Lead Free

Turn On Delay Time :

15 ns

Factory Lead Time :

15 Weeks

Radiation Hardening :

No

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Transistor Application :

SWITCHING