STP45N10F7
- Mfr.Part #
- STP45N10F7
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 45A TO220
- Stock
- 31,408
- In Stock :
- 31,408
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Mounting Type :
- Through Hole
- Height :
- 15.75mm
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 45A
- Length :
- 10.4mm
- Turn On Delay Time :
- 15 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Weight :
- 329.988449mg
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Factory Lead Time :
- 15 Weeks
- JEDEC-95 Code :
- TO-220AB
- Width :
- 4.6mm
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- Mount :
- Through Hole
- Power Dissipation-Max :
- 60W Tc
- Turn-Off Delay Time :
- 24 ns
- Power Dissipation :
- 60W
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Rise Time :
- 17ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1640pF @ 50V
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 100V
- Series :
- DeepGATE™, STripFET™ VII
- Packaging :
- Tube
- Base Part Number :
- STP45N
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-220-3
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Fall Time (Typ) :
- 8 ns
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 22.5A, 10V
- Datasheets
- STP45N10F7
STP45N10F7 Documents

N-Channel Tube 18m Ω @ 22.5A, 10V 1640pF @ 50V 25nC @ 10V 100V TO-220-3
STP45N10F7 Description
STP45N10F7 belongs to the family of N-channel power MOSFETs developed by STMicroelectronics making use of STripFET? F7 technology and an enhanced trench gate structure. It is able to provide extremely low on-state resistance while reducing internal capacitance and gate charge, resulting in faster and more efficient switching.
STP45N10F7 Features
-
Low RDS (on)
-
Excellent figure of merit (FoM)
-
Extremely low on-state resistance
-
Low Crss/Ciss ratio for EMI immunity
-
High avalanche ruggedness
-
Available in the TO-220 package
STP45N10F7 Applications
-
Switching applications
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