STP40NF10

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

21 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

50A

Mounting Type :

Through Hole

Power Dissipation :

150W

Series :

STripFET™ II

FET Type :

N-Channel

Number of Pins :

3

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

28 ns

Rise Time :

63ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

40A

RoHS Status :

ROHS3 Compliant

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Number of Terminations :

3

REACH SVHC :

No SVHC

Threshold Voltage :

3V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Transistor Application :

SWITCHING

Element Configuration :

Single

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Base Part Number :

STP40N

Weight :

4.535924g

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Height :

9.15mm

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

28m Ω @ 25A, 10V

Resistance :

33mOhm

Current Rating :

50A

Power Dissipation-Max :

150W Tc

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

2180pF @ 25V

Mount :

Through Hole

Width :

4.6mm

Operating Temperature :

-55°C~175°C TJ

Length :

10.4mm

Turn-Off Delay Time :

54 ns

Lead Free :

Lead Free

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

100V

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

200A

Voltage - Rated DC :

100V