STP4N150

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

7 Ω @ 2A, 10V

Length :

10.4mm

Base Part Number :

STP4N

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Lead Free :

Lead Free

JESD-609 Code :

e3

Power Dissipation-Max :

160W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

45 ns

Width :

4.6mm

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Mount :

Through Hole

Rise Time :

30ns

Max Junction Temperature (Tj) :

150°C

Series :

PowerMESH™

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Drain to Source Voltage (Vdss) :

1500V

Contact Plating :

Tin

Transistor Application :

SWITCHING

Height :

19.68mm

Current Rating :

4A

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

1.5kV

ECCN Code :

EAR99

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Packaging :

Tube

Turn On Delay Time :

35 ns

Drain Current-Max (Abs) (ID) :

4A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

45 ns

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

4V

Resistance :

7Ohm

Gate to Source Voltage (Vgs) :

30V

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Power Dissipation :

160W

Element Configuration :

Single

Pin Count :

3

Voltage - Rated DC :

1.5kV

Continuous Drain Current (ID) :

4A

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

5V @ 250μA

Factory Lead Time :

12 Weeks

Radiation Hardening :

No