STP2NK60Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

30ns

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

45W

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Voltage - Rated DC :

600V

Fall Time (Typ) :

55 ns

Base Part Number :

STP2N

Continuous Drain Current (ID) :

1.4A

Element Configuration :

Single

Power Dissipation-Max :

45W Tc

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

REACH SVHC :

No SVHC

Series :

SuperMESH™

Packaging :

Tube

Resistance :

8Ohm

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

22 ns

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Lead Free :

Lead Free

Vgs (Max) :

±30V

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

90 mJ

Turn On Delay Time :

8 ns

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

1.4A Tc

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Pulsed Drain Current-Max (IDM) :

6A

Current Rating :

1.4A

Number of Pins :

3

Threshold Voltage :

3.75V

Number of Elements :

1

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

8 Ω @ 700mA, 10V

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

600V

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)