STP28NM60ND

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Mfr.Part #
STP28NM60ND
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 23A TO220
Stock
7,718
In Stock :
7,718

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
FDmesh™ II
FET Type :
N-Channel
Continuous Drain Current (ID) :
23A
Number of Channels :
1
Number of Elements :
1
Turn On Delay Time :
23.5 ns
Operating Temperature :
150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
2090pF @ 100V
Avalanche Energy Rating (Eas) :
50 mJ
Rds On (Max) @ Id, Vgs :
150m Ω @ 11.5A, 10V
Vgs (Max) :
±25V
Number of Terminations :
3
Gate to Source Voltage (Vgs) :
25V
Drain to Source Voltage (Vdss) :
600V
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Element Configuration :
Single
Pulsed Drain Current-Max (IDM) :
92A
Packaging :
Tube
Width :
4.6mm
Case Connection :
DRAIN
ECCN Code :
EAR99
Length :
10.4mm
Power Dissipation-Max :
190W Tc
Mount :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
TO-220-3
Radiation Hardening :
No
Height :
15.75mm
Factory Lead Time :
16 Weeks
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Turn-Off Delay Time :
92 ns
Current - Continuous Drain (Id) @ 25°C :
23A Tc
Vgs(th) (Max) @ Id :
5V @ 250μA
Number of Pins :
3
Lead Free :
Lead Free
JEDEC-95 Code :
TO-220AB
Fall Time (Typ) :
27 ns
Drain to Source Breakdown Voltage :
650V
Gate Charge (Qg) (Max) @ Vgs :
62.5nC @ 10V
Base Part Number :
STP28N
Weight :
329.988449mg
Rise Time :
21.5ns
Datasheets
STP28NM60ND
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STP28NM60ND from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Operating Temperature:150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Pins:3, Base Part Number:STP28N, STP28NM60ND pinout, STP28NM60ND datasheet PDF, STP28NM60ND amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STP28NM60ND ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STP28NM60ND


N-Channel Tube 150m Ω @ 11.5A, 10V ±25V 2090pF @ 100V 62.5nC @ 10V 600V TO-220-3

STP28NM60ND Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 50 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2090pF @ 100V.This device conducts a continuous drain current (ID) of 23A, which is the maximum continuous current transistor can conduct.Using VGS=650V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 650V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 92 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 92A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 23.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

STP28NM60ND Features


the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 92 ns
based on its rated peak drain current 92A.
a 600V drain to source voltage (Vdss)


STP28NM60ND Applications


There are a lot of STMicroelectronics
STP28NM60ND applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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