STP27N3LH5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

30W

Mount :

Through Hole

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

22V

Mounting Type :

Through Hole

Base Part Number :

STP27N

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Package / Case :

TO-220-3

Resistance :

20mOhm

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

475pF @ 25V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Pin Count :

3

Avalanche Energy Rating (Eas) :

50 mJ

ECCN Code :

EAR99

Fall Time (Typ) :

2.8 ns

Rise Time :

22ns

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn) - annealed

Rds On (Max) @ Id, Vgs :

20m Ω @ 13.5A, 10V

Series :

STripFET™ V

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Turn On Delay Time :

4 ns

Element Configuration :

Single

Continuous Drain Current (ID) :

27A

Number of Elements :

1

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±22V

Power Dissipation-Max :

45W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

13 ns

Operating Temperature :

-55°C~175°C TJ