STP260N6F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.4mm

Drain to Source Breakdown Voltage :

75V

Element Configuration :

Single

Number of Elements :

1

Continuous Drain Current (ID) :

120A

Gate Charge (Qg) (Max) @ Vgs :

183nC @ 10V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

144.4 ns

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Height :

15.75mm

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

480A

Series :

DeepGATE™, STripFET™ VI

Power Dissipation :

300W

Number of Pins :

3

Mounting Type :

Through Hole

Pin Count :

3

Vgs (Max) :

±20V

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

11400pF @ 25V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

3mOhm

Turn On Delay Time :

31.4 ns

Power Dissipation-Max :

300W Tc

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

3m Ω @ 60A, 10V

Factory Lead Time :

20 Weeks

Fall Time (Typ) :

62.6 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Base Part Number :

STP260

Mount :

Through Hole

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Rise Time :

165ns

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

2V

RoHS Status :

ROHS3 Compliant

Width :

4.6mm

Transistor Application :

SWITCHING

Number of Terminations :

3

Radiation Hardening :

No