STP25NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

21A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Terminal Finish :

Tin (Sn)

Pin Count :

3

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Reach Compliance Code :

not_compliant

Fall Time (Typ) :

24 ns

Power Dissipation :

160W

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

600V

Mount :

Through Hole

Qualification Status :

Not Qualified

Power Dissipation-Max :

160W Tc

Package / Case :

TO-220-3

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

JESD-609 Code :

e3

Rise Time :

18ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Number of Elements :

1

Base Part Number :

STP25N

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 50V

Lead Free :

Lead Free

Number of Pins :

3

Vgs (Max) :

±25V

Resistance :

160mOhm

Avalanche Energy Rating (Eas) :

850 mJ

Current :

20A

Voltage - Rated DC :

600V

Series :

MDmesh™ II

Voltage :

650V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

25V

Rds On (Max) @ Id, Vgs :

160m Ω @ 10.5A, 10V

Turn-Off Delay Time :

94 ns

Current Rating :

20A