STP21NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Fall Time (Typ) :

31 ns

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

25V

Rise Time :

15ns

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Series :

MDmesh™

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

220m Ω @ 8.5A, 10V

Base Part Number :

STP21N

Voltage - Rated DC :

600V

Pulsed Drain Current-Max (IDM) :

68A

Pin Count :

3

Current Rating :

17A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Turn-Off Delay Time :

84 ns

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

17A

Number of Elements :

1

Drain-source On Resistance-Max :

0.22Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 50V

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

600V

Power Dissipation-Max :

140W Tc

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±25V

Packaging :

Tube

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Power Dissipation :

140W