STI17NF25
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- Mfr.Part #
- STI17NF25
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 17A I2PAK
- Stock
- 47,717
- In Stock ：
- 47,717
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 165m Ω @ 8.5A, 10V
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSIP-T3
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.165Ohm
- Fall Time (Typ) :
- 8.8 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Base Part Number :
- STI17N
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Series :
- STripFET™ II
- Radiation Hardening :
- No
- Rise Time :
- 17.2ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 29.5nC @ 10V
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Terminal Finish :
- MATTE TIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 1000pF @ 25V
- Peak Reflow Temperature (Cel) :
- 245
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 250V
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 3
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Power Dissipation-Max :
- 90W Tc
- Continuous Drain Current (ID) :
- 17A
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 21 ns
- Turn On Delay Time :
- 8.8 ns
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 90W
- Pulsed Drain Current-Max (IDM) :
- 68A
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Number of Elements :
- 1
- Datasheets
- STI17NF25
N-Channel Tube 165m Ω @ 8.5A, 10V ±20V 1000pF @ 25V 29.5nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
STI17NF25 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 100 mJ.A device's maximum input capacitance is 1000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 17A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 21 ns.Its maximum pulsed drain current is 68A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STI17NF25 Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 68A.
STI17NF25 Applications
There are a lot of STMicroelectronics
STI17NF25 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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