STI12N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

15.6 ns

Rise Time :

17.6ns

Vgs (Max) :

±25V

Number of Elements :

1

ECCN Code :

EAR99

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

8.5A Tc

Continuous Drain Current (ID) :

8.5A

Fall Time (Typ) :

15.6 ns

Series :

MDmesh™ V

Drain to Source Breakdown Voltage :

650V

Pin Count :

3

Length :

10.4mm

Height :

9.35mm

Pbfree Code :

yes

Base Part Number :

STI12N

Gate to Source Voltage (Vgs) :

25V

Number of Pins :

3

Mount :

Through Hole

Power Dissipation-Max :

70W Tc

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

430m Ω @ 4.3A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Width :

4.6mm

Element Configuration :

Single

Threshold Voltage :

4V

Vgs(th) (Max) @ Id :

5V @ 250μA

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 100V

Turn On Delay Time :

22.6 ns

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Power Dissipation :

70W

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Avalanche Energy Rating (Eas) :

150 mJ

FET Type :

N-Channel