STI13005-1
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- Mfr.Part #
- STI13005-1
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 3A TO251
- Stock
- 2,866
- In Stock ：
- 2,866
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 9V
- hFE Min :
- 15
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 30W
- JESD-30 Code :
- R-PSIP-T3
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Mount :
- Through Hole
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Max Collector Current :
- 3A
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- STI1300
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 400V
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 30W
- Collector Emitter Voltage (VCEO) :
- 400V
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 500mV
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 2A 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 1mA
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 750mA, 3A
- Datasheets
- STI13005-1
NPN 150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
STI13005-1 Overview
In this device, the DC current gain is 8 @ 2A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 5V @ 750mA, 3A.With the emitter base voltage set at 9V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
STI13005-1 Features
the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 5V @ 750mA, 3A
the emitter base voltage is kept at 9V
STI13005-1 Applications
There are a lot of STMicroelectronics
STI13005-1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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