STI10N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Threshold Voltage :

3.75V

Power Dissipation-Max :

125W Tc

Vgs (Max) :

±30V

Packaging :

Tube

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

15ns

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

220 mJ

Rds On (Max) @ Id, Vgs :

750m Ω @ 4A, 10V

DS Breakdown Voltage-Min :

620V

ECCN Code :

EAR99

Base Part Number :

STI10N

Drain-source On Resistance-Max :

0.75Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 50V

Number of Pins :

3

Height :

10.75mm

Transistor Element Material :

SILICON

Series :

SuperMESH3™

Turn On Delay Time :

14.5 ns

Drain to Source Voltage (Vdss) :

620V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

31 ns

Continuous Drain Current (ID) :

8.4A

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Length :

10.4mm

Transistor Application :

SWITCHING

Number of Elements :

1

Mount :

Through Hole

Mounting Type :

Through Hole

Width :

4.6mm

Turn-Off Delay Time :

41 ns

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

8.4A Tc

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Element Configuration :

Single