STGWT20H60DF

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Mfr.Part #
STGWT20H60DF
Manufacturer
STMicroelectronics
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
IGBT 600V 40A 167W TO3PF
Stock
5,818
In Stock :
5,818

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Collector Emitter Breakdown Voltage :
600V
Reverse Recovery Time :
90ns
Base Part Number :
STGWT20
Packaging :
Tube
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 20A
Element Configuration :
Single
Current - Collector Pulsed (Icm) :
80A
Td (on/off) @ 25°C :
42.5ns/177ns
Max Collector Current :
40A
Max Power Dissipation :
167W
Package / Case :
TO-3P-3, SC-65-3
Collector Emitter Saturation Voltage :
2V
Power Dissipation :
167W
Gate Charge :
115nC
ECCN Code :
EAR99
Width :
5mm
Operating Temperature :
-55°C~175°C TJ
Switching Energy :
209μJ (on), 261μJ (off)
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Number of Pins :
3
Test Condition :
400V, 20A, 10 Ω, 15V
Height :
20.1mm
Length :
15.8mm
Factory Lead Time :
32 Weeks
Mounting Type :
Through Hole
Input Type :
Standard
Mount :
Through Hole
Collector Emitter Voltage (VCEO) :
600V
IGBT Type :
Trench Field Stop
Datasheets
STGWT20H60DF
Introducing Transistors - IGBTs - Single STMicroelectronics STGWT20H60DF from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STGWT20, Package / Case:TO-3P-3, SC-65-3, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Mounting Type:Through Hole, STGWT20H60DF pinout, STGWT20H60DF datasheet PDF, STGWT20H60DF amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGWT20H60DF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGWT20H60DF


STGWT20H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGWT20H60DF  Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.



STGWT20H60DF Features

Maximum junction temperature: TJ = 175 °C

Tail-less switching off

VCE(sat) = 1.8 V (Typ.) @ IC = 20 A

Tight parameter distribution

Safe paralleling

Low thermal resistance



STGWT20H60DF  Applications

Photovoltaic inweters

Unteruplble power supply

Welding

Pover facor corredion

Very high frequency converters




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