STD5NM60-1
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- Mfr.Part #
- STD5NM60-1
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5A IPAK
- Stock
- 15,317
- In Stock ：
- 15,317
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- 260
- Drain to Source Breakdown Voltage :
- 600V
- Packaging :
- Tube
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Pulsed Drain Current-Max (IDM) :
- 20A
- Turn On Delay Time :
- 14 ns
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Current Rating :
- 8A
- Drain-source On Resistance-Max :
- 1Ohm
- Pin Count :
- 3
- Mount :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Base Part Number :
- STD5N
- Power Dissipation-Max :
- 96W Tc
- Terminal Finish :
- Matte Tin (Sn)
- Threshold Voltage :
- 4V
- Width :
- 2.4mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Rise Time :
- 10ns
- Length :
- 6.6mm
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 2.5A, 10V
- Fall Time (Typ) :
- 10 ns
- Continuous Drain Current (ID) :
- 5A
- Power Dissipation :
- 96W
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Factory Lead Time :
- 26 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 23 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-609 Code :
- e3
- Drain Current-Max (Abs) (ID) :
- 5A
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Height :
- 6.2mm
- FET Type :
- N-Channel
- Series :
- MDmesh™
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 650V
- Datasheets
- STD5NM60-1
STD5NM60-1 Documents
N-Channel Tube 1 Ω @ 2.5A, 10V ±30V 400pF @ 25V 18nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
STD5NM60-1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 200 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 400pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 5A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23 ns.Peak drain current is 20A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STD5NM60-1 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 20A.
a threshold voltage of 4V
STD5NM60-1 Applications
There are a lot of STMicroelectronics
STD5NM60-1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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