STD5NM60-1

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Mfr.Part #
STD5NM60-1
Manufacturer
STMicroelectronics
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 600V 5A IPAK
Stock
15,317
In Stock :
15,317

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
REACH SVHC :
No SVHC
Turn-Off Delay Time :
23 ns
Height :
6.2mm
Fall Time (Typ) :
10 ns
Number of Elements :
1
Drain Current-Max (Abs) (ID) :
5A
Peak Reflow Temperature (Cel) :
260
Power Dissipation :
96W
Vgs(th) (Max) @ Id :
5V @ 250μA
Operating Mode :
ENHANCEMENT MODE
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Threshold Voltage :
4V
Transistor Application :
SWITCHING
Terminal Finish :
Matte Tin (Sn)
Pin Count :
3
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
5A Tc
Base Part Number :
STD5N
Transistor Element Material :
SILICON
Pulsed Drain Current-Max (IDM) :
20A
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 10V
Continuous Drain Current (ID) :
5A
Rds On (Max) @ Id, Vgs :
1 Ω @ 2.5A, 10V
FET Type :
N-Channel
Factory Lead Time :
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 25V
JESD-609 Code :
e3
Number of Pins :
3
Series :
MDmesh™
Drain-source On Resistance-Max :
1Ohm
Vgs (Max) :
±30V
Lead Free :
Lead Free
Power Dissipation-Max :
96W Tc
Rise Time :
10ns
Number of Terminations :
3
Voltage - Rated DC :
650V
Turn On Delay Time :
14 ns
Width :
2.4mm
Avalanche Energy Rating (Eas) :
200 mJ
Time@Peak Reflow Temperature-Max (s) :
30
Mounting Type :
Through Hole
Current Rating :
8A
Radiation Hardening :
No
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Length :
6.6mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
30V
Mount :
Through Hole
Drain to Source Breakdown Voltage :
600V
Datasheets
STD5NM60-1
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD5NM60-1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Base Part Number:STD5N, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, STD5NM60-1 pinout, STD5NM60-1 datasheet PDF, STD5NM60-1 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD5NM60-1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD5NM60-1


N-Channel Tube 1 Ω @ 2.5A, 10V ±30V 400pF @ 25V 18nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

STD5NM60-1 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 200 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 400pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 5A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23 ns.Peak drain current is 20A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STD5NM60-1 Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 20A.
a threshold voltage of 4V


STD5NM60-1 Applications


There are a lot of STMicroelectronics
STD5NM60-1 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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