STD55N4F5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Fall Time (Typ) :

6 ns

Pin Count :

3

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

25 ns

Lead Free :

Lead Free

Base Part Number :

STD55N

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 25V

Resistance :

8.5mOhm

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

55A

Power Dissipation :

60W

Mount :

Surface Mount

Turn On Delay Time :

15 ns

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Series :

STripFET™ V

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 27.5A, 10V

Rise Time :

15ns

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

60W Tc

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Number of Elements :

1

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

220A

Number of Terminations :

2

Drain to Source Breakdown Voltage :

40V